The tool is for etching thin (< 200 nm) layers of (poly)silicon, silicon nitrides and silicon oxides.
Other thin layers (e.g. graphene, graphene oxide, GaN) may also be etched if necessary.
The removal (ashing) of photoresist is not allowed ; use Bâti 5 or TEPLA (preferred).
Please follow the correct plasma cleaning procedure after etching (displayed beside the tool).