Picture of PECVD Bati3
Current status:
AVAILABLE
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Group:
CMNF - Dépôts chimiques
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Silicon Oxyde, Silicon Nitride and Oxynitride deposition by PECVD. Film stress can be controlled by high / low frequency mixing techniques. Temperature range : 20°C --> 350°C. . hickness : 5nm to 3µm. Uniformity : 3% on 6 inches wafers.

Tool name:
PECVD Bati3
Manufacturer:
Oxford Instruments
Model:
Plasmalab80Plus

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