Silicon Oxide, Silicon Nitride and Oxnitride deposition by PECVD. Film stress can be controlled by high / low frequency mixing techniques. Temperature range : 20°C --> 350°C.  Thickness : 5nm to 3µm. Uniformity : 3% on 6 inches wafers.

Cleaning after 3 µm followed by conditionning of 200 nm.

Chage of material requires a prior conditionning of 50 nm.

Instructors

Licensed Users